Manufacturer Part Number
DMN63D8LV-7
Manufacturer
Diodes Incorporated
Introduction
Dual N-Channel MOSFET Array
Product Features and Performance
Drain to Source Voltage (Vdss) of 30V
Low On-Resistance (Rds(on)) of 2.8Ω @ 250mA, 10V
Continuous Drain Current (Id) of 260mA @ 25°C
Input Capacitance (Ciss) of 22pF @ 25V
Logic Level Gate with Vgs(th) of 1.5V @ 250μA
Gate Charge (Qg) of 0.87nC @ 10V
Power Rating of 450mW
Operating Temperature Range of -55°C to 150°C
Product Advantages
Compact SOT-563 and SOT-666 surface mount package
Suitable for low-power, space-constrained applications
Excellent thermal performance and reliability
Key Technical Parameters
Dual N-Channel MOSFET Array
30V Drain to Source Voltage (Vdss)
8Ω On-Resistance (Rds(on))
260mA Continuous Drain Current (Id)
22pF Input Capacitance (Ciss)
5V Gate Threshold Voltage (Vgs(th))
87nC Gate Charge (Qg)
450mW Power Rating
-55°C to 150°C Operating Temperature Range
Quality and Safety Features
RoHS3 Compliant
Tape and Reel Packaging
Compatibility
Surface Mount (SMT) compatible
Suitable for a variety of low-power, space-constrained applications
Application Areas
Power management circuits
Logic level switching
Battery-powered devices
Portable electronics
General purpose switching
Product Lifecycle
Currently in production
Replacement or upgraded models may become available in the future
Key Reasons to Choose This Product
Compact and space-saving SOT-563 and SOT-666 packages
Low on-resistance for efficient power transfer
High reliability and thermal performance
Suitable for a wide range of low-power, space-constrained applications
RoHS3 compliance for environmentally-friendly design