DMN63D8LV-7 - Diodes Incorporated

Manufacturer Part Number

DMN63D8LV-7

Manufacturer

Diodes Incorporated

Introduction

Dual N-Channel MOSFET Array

Product Features and Performance

Drain to Source Voltage (Vdss) of 30V

Low On-Resistance (Rds(on)) of 2.8Ω @ 250mA, 10V

Continuous Drain Current (Id) of 260mA @ 25°C

Input Capacitance (Ciss) of 22pF @ 25V

Logic Level Gate with Vgs(th) of 1.5V @ 250μA

Gate Charge (Qg) of 0.87nC @ 10V

Power Rating of 450mW

Operating Temperature Range of -55°C to 150°C

Product Advantages

Compact SOT-563 and SOT-666 surface mount package

Suitable for low-power, space-constrained applications

Excellent thermal performance and reliability

Key Technical Parameters

Dual N-Channel MOSFET Array

30V Drain to Source Voltage (Vdss)

8Ω On-Resistance (Rds(on))

260mA Continuous Drain Current (Id)

22pF Input Capacitance (Ciss)

5V Gate Threshold Voltage (Vgs(th))

87nC Gate Charge (Qg)

450mW Power Rating

-55°C to 150°C Operating Temperature Range

Quality and Safety Features

RoHS3 Compliant

Tape and Reel Packaging

Compatibility

Surface Mount (SMT) compatible

Suitable for a variety of low-power, space-constrained applications

Application Areas

Power management circuits

Logic level switching

Battery-powered devices

Portable electronics

General purpose switching

Product Lifecycle

Currently in production

Replacement or upgraded models may become available in the future

Key Reasons to Choose This Product

Compact and space-saving SOT-563 and SOT-666 packages

Low on-resistance for efficient power transfer

High reliability and thermal performance

Suitable for a wide range of low-power, space-constrained applications

RoHS3 compliance for environmentally-friendly design