Manufacturer Part Number
DMN63D8LDW-7
Manufacturer
Diodes Incorporated
Introduction
Dual N-Channel MOSFET transistor
Product Features and Performance
30V drain-to-source voltage
8Ω on-resistance
220mA continuous drain current
22pF input capacitance
Logic level gate
87nC gate charge
Product Advantages
Low on-resistance for efficient power switching
Logic level gate for easy drive
Small footprint for space-constrained designs
Key Technical Parameters
Drain-to-Source Voltage: 30V
On-Resistance: 2.8Ω
Continuous Drain Current: 220mA
Input Capacitance: 22pF
Gate Threshold Voltage: 1.5V
Quality and Safety Features
RoHS3 compliant
Operates from -55°C to 150°C
Compatibility
Surface mount package (SOT-363)
Tape and reel packaging
Application Areas
Power management circuits
Switching and control applications
Battery-powered devices
Product Lifecycle
Current production, no plans for discontinuation
Replacement or upgrade options available from Diodes Incorporated
Key Reasons to Choose
Efficient power switching with low on-resistance
Logic level gate for easy control
Small package size for space-constrained designs
Wide operating temperature range