Manufacturer Part Number
DMN63D1LDW-7
Manufacturer
Diodes Incorporated
Introduction
Dual N-Channel MOSFET Device
Product Features and Performance
60V Drain-to-Source Voltage
2Ω Maximum On-Resistance at 500mA, 10V
250mA Continuous Drain Current at 25°C
30pF Maximum Input Capacitance at 25V
5V Maximum Gate Threshold Voltage at 1mA
3nC Maximum Gate Charge at 4.5V
Product Advantages
Compact SOT-363 package
Low on-resistance for efficient switching
Wide operating temperature range of -55°C to 150°C
Suitable for low-power, space-constrained applications
Key Technical Parameters
Drain-to-Source Voltage: 60V
On-Resistance: 2Ω
Drain Current: 250mA
Input Capacitance: 30pF
Gate Threshold Voltage: 2.5V
Gate Charge: 0.3nC
Quality and Safety Features
RoHS3 compliant
Suitable for surface mount applications
Compatibility
Can be used in a variety of low-power, space-constrained applications, such as:
Power management circuits
Voltage regulators
Switches
Amplifiers
Application Areas
Power management
Voltage regulation
Switching circuits
Amplifier circuits
Product Lifecycle
This product is currently in production and not nearing discontinuation.
Replacement or upgrade options may be available from the manufacturer.
Key Reasons to Choose This Product
Compact SOT-363 package for space-constrained designs
Low on-resistance for efficient switching performance
Wide operating temperature range for reliable operation
Suitable for a variety of low-power applications
RoHS3 compliance for environmental safety