Manufacturer Part Number
DMN62D1LFD-7
Manufacturer
Diodes Incorporated
Introduction
This is a discrete semiconductor product, specifically a single N-channel MOSFET transistor.
Product Features and Performance
60V drain-source voltage
±20V gate-source voltage
2Ω maximum on-resistance at 100mA, 4V
400mA continuous drain current at 25°C
36pF maximum input capacitance at 25V
500mW maximum power dissipation at 25°C
1V maximum gate threshold voltage at 250μA
55nC maximum gate charge at 4.5V
Product Advantages
Low on-resistance for efficient power switching
Wide operating temperature range of -55°C to 150°C
Surface mount package for compact design
Key Technical Parameters
MOSFET technology
N-channel FET type
3-UDFN package
Quality and Safety Features
RoHS3 compliant
Compatibility
Can be used in a variety of electronic circuits and applications requiring a small, low-resistance MOSFET
Application Areas
Power management
Switching circuits
Amplifier circuits
General-purpose electronic applications
Product Lifecycle
This product is currently in production and not nearing discontinuation.
Replacement or upgraded products may become available in the future as technology evolves.
Several Key Reasons to Choose This Product
Excellent performance and efficiency due to low on-resistance
Compact and space-saving surface mount package
Wide operating temperature range for versatile applications
RoHS3 compliance for environmental responsibility
Proven reliability and quality from Diodes Incorporated