Manufacturer Part Number
DMN62D0U-7
Manufacturer
Diodes Incorporated
Introduction
N-Channel Enhancement Mode Field Effect Transistor (MOSFET)
Product Features and Performance
60V Drain-Source Voltage
2Ω Maximum On-Resistance @ 100mA, 4.5V
380mA Continuous Drain Current @ 25°C
Low Input Capacitance of 32pF @ 30V
380mW Maximum Power Dissipation
Wide Operating Temperature Range of -55°C to 150°C
Product Advantages
Low On-Resistance for Efficient Power Switching
High Voltage Handling Capability
Small Footprint in SOT-23-3 Package
Wide Temperature Range for Diverse Applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 60V
Maximum Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 2Ω @ 100mA, 4.5V
Drain Current (Id): 380mA @ 25°C
Input Capacitance (Ciss): 32pF @ 30V
Power Dissipation (Pd): 380mW
Quality and Safety Features
RoHS3 Compliant
Meets Stringent Quality and Reliability Standards
Compatibility
Compatible with a wide range of electronic systems and applications
Application Areas
Switching Power Supplies
Motor Drives
LED Lighting
Industrial Controls
Telecommunication Equipment
Product Lifecycle
The DMN62D0U-7 is an active and widely available product, with no immediate plans for discontinuation.
Replacement or upgrade options may be available from Diodes Incorporated or other manufacturers.
Key Reasons to Choose This Product
Excellent performance-to-cost ratio with low on-resistance and high voltage handling
Compact SOT-23-3 package for space-constrained designs
Wide operating temperature range for use in diverse environmental conditions
Proven reliability and quality backed by Diodes Incorporated's reputation
Readily available and actively supported product in the market