Manufacturer Part Number
DMN61D9UWQ-13
Manufacturer
Diodes Incorporated
Introduction
N-channel MOSFET transistor
Designed for power switch and amplifier applications
Product Features and Performance
60V drain-source voltage
400mA continuous drain current
2Ω maximum on-resistance
5pF maximum input capacitance
440mW maximum power dissipation
Suitable for -55°C to 150°C operating temperature range
Product Advantages
Efficient power switching and amplification
Compact surface mount package
Reliable performance across wide temperature range
Key Technical Parameters
Drain-Source Voltage (Vdss): 60V
Maximum Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 2Ω @ 50mA, 5V
Drain Current (Id): 400mA @ 25°C
Input Capacitance (Ciss): 28.5pF @ 30V
Power Dissipation (Pd): 440mW @ 25°C
Quality and Safety Features
RoHS3 compliant
Qualified for industrial and consumer applications
Compatibility
Suitable for surface mount assembly in SOT-323 package
Application Areas
Power switching circuits
Power amplifier circuits
General purpose power control
Product Lifecycle
Currently in production
Replacements and upgrades may become available in the future
Key Reasons to Choose
Efficient power handling capabilities
Compact surface mount design
Wide operating temperature range
Reliable performance for industrial and consumer applications