Manufacturer Part Number
DMN61D8LVTQ-7
Manufacturer
Diodes Incorporated
Introduction
Dual N-Channel MOSFET Array
Product Features and Performance
60V Drain to Source Voltage
8Ω On-Resistance
630mA Continuous Drain Current
9pF Input Capacitance
Logic Level Gate
2V Gate Threshold Voltage
74nC Gate Charge
Product Advantages
Compact TSOT-26 package
Excellent thermal performance
Suitable for space-constrained applications
Reliable and robust design
Key Technical Parameters
Drain to Source Voltage: 60V
On-Resistance: 1.8Ω
Continuous Drain Current: 630mA
Input Capacitance: 12.9pF
Gate Threshold Voltage: 2V
Gate Charge: 0.74nC
Quality and Safety Features
RoHS3 compliant
Suitable for harsh environments (-55°C to 150°C)
Maximum Power Dissipation: 820mW
Compatibility
Surface mount package (SOT-23-6 Thin, TSOT-23-6)
Tape and reel packaging
Application Areas
Switching circuits
Power management
Motor control
Lighting control
Electronic appliances
Product Lifecycle
Current product, no known discontinuation
Replacements and upgrades may be available
Key Reasons to Choose This Product
Compact and space-efficient package
Excellent thermal management
High voltage and current handling capabilities
Reliable and robust design for harsh environments
Suitable for a wide range of applications