DMN6140L-13 - Diodes Incorporated

Manufacturer Part Number

DMN6140L-13

Manufacturer

Diodes Incorporated

Introduction

N-channel enhancement mode field effect transistor (FET) in a small SOT-23-3 package.

Product Features and Performance

Drain-source voltage up to 60V

Low on-resistance of 140mOhm

Continuous drain current up to 1.6A

Low gate charge of 8.6nC

Wide operating temperature range of -55°C to 150°C

Small SOT-23-3 surface mount package

Product Advantages

Excellent power handling capability

Low power consumption

Compact size and easy to integrate

Reliable performance in high-temperature applications

Key Technical Parameters

Drain-source voltage (Vdss): 60V

Gate-source voltage (Vgs): ±20V

On-resistance (Rds(on)): 140mOhm

Continuous drain current (Id): 1.6A

Input capacitance (Ciss): 315pF

Power dissipation (Pd): 700mW

Quality and Safety Features

RoHS3 compliant

Designed and manufactured to high quality standards

Compatibility

Compatible with various electronic circuits and applications that require a high-performance N-channel MOSFET

Application Areas

Power management circuits

Switching circuits

Motor control

Amplifier circuits

General purpose electronic applications

Product Lifecycle

The DMN6140L-13 is an active product and is not nearing discontinuation.

Replacement or upgrade options are available from Diodes Incorporated.

Several Key Reasons to Choose This Product

Excellent power handling and low on-resistance for efficient power management

Wide operating temperature range for reliable performance in harsh environments

Small and compact package for space-constrained designs

Proven quality and reliability from a reputable manufacturer

Availability of replacement and upgrade options for long-term support