Manufacturer Part Number
DMN6140L-13
Manufacturer
Diodes Incorporated
Introduction
N-channel enhancement mode field effect transistor (FET) in a small SOT-23-3 package.
Product Features and Performance
Drain-source voltage up to 60V
Low on-resistance of 140mOhm
Continuous drain current up to 1.6A
Low gate charge of 8.6nC
Wide operating temperature range of -55°C to 150°C
Small SOT-23-3 surface mount package
Product Advantages
Excellent power handling capability
Low power consumption
Compact size and easy to integrate
Reliable performance in high-temperature applications
Key Technical Parameters
Drain-source voltage (Vdss): 60V
Gate-source voltage (Vgs): ±20V
On-resistance (Rds(on)): 140mOhm
Continuous drain current (Id): 1.6A
Input capacitance (Ciss): 315pF
Power dissipation (Pd): 700mW
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
Compatible with various electronic circuits and applications that require a high-performance N-channel MOSFET
Application Areas
Power management circuits
Switching circuits
Motor control
Amplifier circuits
General purpose electronic applications
Product Lifecycle
The DMN6140L-13 is an active product and is not nearing discontinuation.
Replacement or upgrade options are available from Diodes Incorporated.
Several Key Reasons to Choose This Product
Excellent power handling and low on-resistance for efficient power management
Wide operating temperature range for reliable performance in harsh environments
Small and compact package for space-constrained designs
Proven quality and reliability from a reputable manufacturer
Availability of replacement and upgrade options for long-term support
DMN6088SE-13Diodes Incorporated