Manufacturer Part Number
DMN60H080DS-7
Manufacturer
Diodes Incorporated
Introduction
High-voltage, low on-resistance N-channel MOSFET in a small SOT-23-3 package.
Product Features and Performance
600V drain-source voltage
80mA continuous drain current
100Ω maximum on-resistance
Low input capacitance of 25pF
Operates over -55°C to 150°C temperature range
Low gate charge of 1.7nC
Product Advantages
Compact SOT-23-3 package
High voltage and low on-resistance for efficient power conversion
Suitable for a wide range of applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 600V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 100Ω @ 60mA, 10V
Continuous Drain Current (Id): 80mA
Input Capacitance (Ciss): 25pF
Power Dissipation: 1.1W
Quality and Safety Features
RoHS3 compliant
Designed for reliable and safe operation
Compatibility
Suitable for various power conversion and control applications
Application Areas
Power supplies
Motor drives
Lighting
Industrial controls
Product Lifecycle
Current model, no plans for discontinuation
Replacement or upgrade options available if needed
Key Reasons to Choose
High voltage and low on-resistance for efficient power conversion
Compact and space-saving SOT-23-3 package
Wide operating temperature range of -55°C to 150°C
RoHS3 compliance for environmentally-friendly applications