Manufacturer Part Number
DMN6075S-7
Manufacturer
Diodes Incorporated
Introduction
The DMN6075S-7 is a N-Channel MOSFET transistor from Diodes Incorporated. It is a single discrete semiconductor device designed for various power electronics and switching applications.
Product Features and Performance
60V Drain-to-Source Voltage (Vdss)
±20V Gate-to-Source Voltage (Vgs)
85mΩ maximum On-Resistance (Rds(on)) at 3.2A, 10V
2A continuous Drain Current (Id) at 25°C
606pF maximum Input Capacitance (Ciss) at 20V
800mW Power Dissipation (Ptot) at 25°C
Operating Temperature Range: -55°C to 150°C
Product Advantages
Low On-Resistance for efficient power switching
High Voltage Capability for a wide range of applications
Surface Mount Packaging for easy integration
RoHS Compliant for environmentally conscious designs
Key Technical Parameters
MOSFET Technology: N-Channel
Vgs(th) (Max): 3V at 250µA
Drive Voltage (Max Rds(on), Min Rds(on)): 4.5V, 10V
Gate Charge (Qg) (Max): 12.3nC at 10V
Quality and Safety Features
RoHS3 Compliant
Tape and Reel Packaging
Compatibility
The DMN6075S-7 is compatible with a wide range of electronic circuits and systems that require a high-performance, low on-resistance N-Channel MOSFET.
Application Areas
Power supplies
Motor drives
Switching circuits
General-purpose power electronics
Product Lifecycle
The DMN6075S-7 is an actively supported product by Diodes Incorporated. There are no indications of the product being discontinued or nearing the end of its lifecycle. Replacement or upgrade options may be available from the manufacturer.
Key Reasons to Choose This Product
Excellent efficiency due to low on-resistance
Versatile voltage and current capabilities
Surface mount packaging for easy integration
Robust thermal and electrical performance
RoHS compliance for environmentally conscious designs
Ongoing support and availability from the manufacturer
