Manufacturer Part Number
DMN6070SY-13
Manufacturer
Diodes Incorporated
Introduction
The DMN6070SY-13 is a single N-channel MOSFET from Diodes Incorporated, designed for a wide range of power management and switching applications.
Product Features and Performance
60V drain-to-source voltage
85mΩ maximum on-resistance at 2.5A, 10V
1A continuous drain current at 25°C
-55°C to 150°C operating temperature range
Low gate charge of 12.3nC at 10V
Fast switching speed
Product Advantages
Excellent power efficiency due to low on-resistance
Wide operating temperature range
Suitable for high-frequency, high-current applications
Compact SOT-89-3 package for space-constrained designs
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 60V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 85mΩ @ 2.5A, 10V
Continuous Drain Current (Id): 4.1A @ 25°C
Input Capacitance (Ciss): 588pF @ 30V
Power Dissipation (Pd): 2.1W
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
Suitable for a wide range of power management and switching applications
Application Areas
Power supplies
Motor drives
Switching regulators
Power amplifiers
Battery chargers
Product Lifecycle
Current product, no indication of discontinuation
Replacements and upgrades may be available from Diodes Incorporated
Several Key Reasons to Choose This Product
Excellent power efficiency due to low on-resistance
Wide operating temperature range for versatile applications
Compact SOT-89-3 package for space-constrained designs
Fast switching speed for high-frequency, high-current applications
RoHS3 compliance for use in environmentally conscious designs