Manufacturer Part Number
DMN6069SE-13
Manufacturer
Diodes Incorporated
Introduction
High-performance N-channel MOSFET with low on-resistance and fast switching for automotive and industrial applications.
Product Features and Performance
Low on-resistance and fast switching
Automotive-qualified device (AEC-Q101)
Wide operating temperature range (-55°C to 150°C)
High drain-source voltage (60V) and gate-source voltage (±20V)
Low input capacitance (825pF) and gate charge (16nC)
High continuous drain current (4.3A at Ta, 10A at Tc)
Low power dissipation (2.2W at Ta)
Product Advantages
Improved energy efficiency and reduced power losses
Reliable operation in harsh automotive and industrial environments
Versatile design for various power switching applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 60V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 69mΩ @ 3A, 10V
Continuous Drain Current (Id): 4.3A (Ta), 10A (Tc)
Input Capacitance (Ciss): 825pF @ 30V
Gate Charge (Qg): 16nC @ 10V
Quality and Safety Features
RoHS3 compliant
Automotive-qualified (AEC-Q101)
Tape and reel packaging for reliable surface mount assembly
Compatibility
Compatible with standard SOT-223-3 footprint
Application Areas
Automotive electronics (e.g., engine control, lighting, power steering)
Industrial power supplies and motor drives
General-purpose power switching and control
Product Lifecycle
This product is currently in active production and not nearing discontinuation.
Replacement or upgrade options may be available from Diodes Incorporated or other manufacturers.
Key Reasons to Choose This Product
Excellent performance and energy efficiency in power switching applications
Reliable operation in harsh automotive and industrial environments
Automotive-qualified and RoHS3 compliant for broad applicability
Versatile design and compatibility with standard footprints
Trusted brand and manufacturer (Diodes Incorporated) with strong technical support
DMN6068LK3-13Diodes IncorporatedMOSFET N-CH 60V 6A TO252-3