DMN6140LQ-7 - Diodes Incorporated

Manufacturer Part Number

DMN6140LQ-7

Manufacturer

Diodes Incorporated

Introduction

High-performance N-Channel MOSFET transistor for power switching applications

Product Features and Performance

Supports up to 60V drain-to-source voltage

Very low on-resistance of 140mΩ max at 1.8A, 10V gate

Fast switching speed

High input impedance

Wide operating temperature range from -55°C to 150°C

Product Advantages

Excellent power efficiency and low power dissipation

Compact surface mount package

Reliable performance in harsh environments

Key Technical Parameters

Drain-to-source voltage (Vdss): 60V

Gate-to-source voltage (Vgs): ±20V

On-resistance (Rds(on)): 140mΩ max at 1.8A, 10V

Drain current (Id): 1.6A continuous at 25°C

Input capacitance (Ciss): 315pF max at 40V

Power dissipation: 700mW max at 25°C

Quality and Safety Features

RoHS3 compliant

Meets AEC-Q101 automotive qualification standard

Compatibility

Suitable for use in a wide range of power switching applications

Application Areas

Power supplies

Motor drives

Switching regulators

Battery chargers

Industrial and consumer electronics

Product Lifecycle

This product is currently in active production. Replacements and upgrades may be available in the future.

Key Reasons to Choose This Product

Excellent power efficiency and low power dissipation

Fast switching speed and high input impedance

Wide operating temperature range for reliable performance

Compact surface mount package for space-constrained designs

Meets automotive industry quality and safety standards