Manufacturer Part Number
DMN61D9UW-7
Manufacturer
Diodes Incorporated
Introduction
Low-power N-channel MOSFET with high efficiency and compact size, suitable for a wide range of power switching applications.
Product Features and Performance
60V drain-to-source voltage
Low on-resistance (2Ω @ 50mA, 5V)
Compact SOT-323 package
Wide operating temperature range (-55°C to 150°C)
Low input capacitance (28.5pF @ 30V)
Low gate charge (0.4nC @ 4.5V)
Product Advantages
Excellent power efficiency
Compact and space-saving design
Reliable operation across wide temperature range
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 60V
Gate-to-Source Voltage (Vgs): ±20V
Continuous Drain Current (Id): 340mA
On-Resistance (Rds(on)): 2Ω @ 50mA, 5V
Input Capacitance (Ciss): 28.5pF @ 30V
Power Dissipation (Pd): 320mW
Quality and Safety Features
RoHS3 compliant
Suitable for reflow soldering
Compatibility
Surface mount SOT-323 package
Tape & reel packaging
Application Areas
Power switches
Load switches
Driver circuits
Battery-powered devices
Product Lifecycle
Currently available
No plans for discontinuation
Several Key Reasons to Choose This Product
High efficiency and low power consumption
Compact and space-saving design
Wide operating temperature range
Reliable and robust performance
Ease of integration into various power electronics designs