DMN61D8LQ-7 - Diodes Incorporated

Manufacturer Part Number

DMN61D8LQ-7

Manufacturer

Diodes Incorporated

Introduction

High-performance N-channel MOSFET transistor suitable for a wide range of power management and switching applications.

Product Features and Performance

Ultra-low on-resistance for efficient power conversion

Fast switching speed for high-frequency operation

Compact SOT-23-3 package for space-constrained designs

Wide operating temperature range of -55°C to 150°C

Product Advantages

Excellent power efficiency and thermal management

Reliable and stable performance across a wide temperature range

Compact footprint for space-saving circuit board layouts

Key Technical Parameters

Drain-to-source voltage (Vdss): 60V

Maximum gate-to-source voltage (Vgs): ±12V

On-resistance (Rds(on)): 1.8Ω @ 150mA, 5V

Continuous drain current (Id): 470mA @ 25°C

Input capacitance (Ciss): 12.9pF @ 12V

Power dissipation: 390mW @ 25°C

Quality and Safety Features

RoHS3 compliant for environmental responsibility

Reliable operation within the specified temperature range

ESD protection for improved circuit robustness

Compatibility

Compatible with a variety of power management and switching applications

Suitable for use in surface-mount circuit board designs

Application Areas

Power supplies

DC-DC converters

Motor control

LED drivers

Battery management systems

Portable electronics

Product Lifecycle

Currently in production

No plans for discontinuation

Replacement or upgrade options available from the manufacturer

Key Reasons to Choose This Product

Excellent power efficiency and thermal management

Fast switching speed for high-frequency operation

Compact footprint for space-saving circuit board layouts

Reliable and stable performance across a wide temperature range

RoHS3 compliance for environmental responsibility

Availability of replacement or upgrade options from the manufacturer