DMN61D8L-7 - Diodes Incorporated

Manufacturer Part Number

DMN61D8L-7

Manufacturer

Diodes Incorporated

Introduction

This is a single N-channel MOSFET transistor from Diodes Incorporated.

Product Features and Performance

60V drain-source voltage rating

8Ω maximum on-resistance at 150mA, 5V

470mA continuous drain current at 25°C

9pF maximum input capacitance at 12V

390mW maximum power dissipation at 25°C

Gate threshold voltage of 2V at 1mA drain current

Gate drive voltage range of 3V to 5V

Product Advantages

Suitable for high-side and low-side switching applications

Low on-resistance for efficient power switching

Small SOT-23-3 package for compact designs

Wide operating temperature range of -55°C to 150°C

Key Technical Parameters

Drain-Source Voltage (Vdss): 60V

Gate-Source Voltage (Vgs): ±12V

On-Resistance (Rds(on)): 1.8Ω @ 150mA, 5V

Continuous Drain Current (Id): 470mA @ 25°C

Input Capacitance (Ciss): 12.9pF @ 12V

Power Dissipation (Pd): 390mW @ 25°C

Gate Threshold Voltage (Vgs(th)): 2V @ 1mA

Gate Charge (Qg): 0.74nC @ 5V

Quality and Safety Features

RoHS3 compliant

Qualified to AEC-Q101 automotive standard

Compatibility

Suitable for use in a wide range of electronic circuits and applications

Application Areas

High-side and low-side switching circuits

Power management and control systems

Automotive and industrial electronics

Product Lifecycle

Currently in active production

Replacement or upgrade options may be available from Diodes Incorporated

Key Reasons to Choose This Product

Excellent performance characteristics, including low on-resistance and high current capability

Compact SOT-23-3 package for space-constrained designs

Wide operating temperature range for reliable operation in harsh environments

RoHS compliance and automotive qualification for use in diverse applications

Availability and support from a reputable semiconductor manufacturer, Diodes Incorporated