Manufacturer Part Number
DMN62D1SFB-7B
Manufacturer
Diodes Incorporated
Introduction
N-Channel MOSFET Transistor with Low RDS(on) for Power Management Applications
Product Features and Performance
Low on-resistance (RDS(on)) of 1.4Ω @ 40mA, 10V
Continuous drain current (ID) of 410mA at 25°C
Wide operating temperature range of -55°C to 150°C
High drain-source breakdown voltage (VDS) of 60V
Low gate-source voltage (VGS) of ±20V
Input capacitance (Ciss) of 80pF @ 40V
Power dissipation of 470mW at 25°C
Product Advantages
Excellent performance for power management applications
Compact 3-UFDFN package for space-constrained designs
Suitable for a wide range of operating temperatures
Key Technical Parameters
Drain-Source Voltage (VDS): 60V
Gate-Source Voltage (VGS): ±20V
On-Resistance (RDS(on)): 1.4Ω @ 40mA, 10V
Continuous Drain Current (ID): 410mA at 25°C
Input Capacitance (Ciss): 80pF @ 40V
Power Dissipation (PD): 470mW at 25°C
Quality and Safety Features
RoHS3 compliant
Meets industrial quality and reliability standards
Compatibility
Suitable for a wide range of power management and switching applications
Application Areas
Power management circuits
Switching regulators
Battery chargers
Motor drivers
General-purpose power switching
Product Lifecycle
This product is currently in production and available for purchase.
Replacement or upgrade options may be available in the future, but the current model is still widely used and supported.
Key Reasons to Choose This Product
Excellent performance-to-cost ratio with low RDS(on) and high current handling capability
Compact 3-UFDFN package for space-constrained designs
Wide operating temperature range for reliable performance in various environments
RoHS3 compliance for environmentally-friendly applications
Proven track record and support from a reputable manufacturer, Diodes Incorporated