Manufacturer Part Number
DMN63D1L-7
Manufacturer
Diodes Incorporated
Introduction
N-Channel Enhancement Mode MOSFET
Product Features and Performance
60V Drain-Source Voltage
380mA Continuous Drain Current
2Ω On-Resistance
30pF Input Capacitance
3nC Gate Charge
Operating Temperature Range: -55°C to 150°C
Product Advantages
Suitable for switching and amplifying applications
Compact SOT-23-3 package
RoHS compliant
Key Technical Parameters
Drain-Source Voltage (Vdss): 60V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 2Ω @ 500mA, 10V
Drain Current (Id): 380mA
Input Capacitance (Ciss): 30pF
Power Dissipation: 370mW
Quality and Safety Features
RoHS3 compliant
Meets industrial quality standards
Compatibility
Compatible with various electronic circuits and systems requiring a small, high-performance MOSFET
Application Areas
Switching circuits
Amplifier circuits
Power management
Automotive electronics
Industrial electronics
Product Lifecycle
Currently in production
No known plans for discontinuation
Replacement or upgrade options available from Diodes Incorporated
Key Reasons to Choose This Product
Compact and space-efficient SOT-23-3 package
Low on-resistance for efficient power handling
Wide operating temperature range
RoHS compliance for environmental responsibility
Proven reliability and performance from a reputable manufacturer