DMN63D8LW-13 - Diodes Incorporated

Manufacturer Part Number

DMN63D8LW-13

Manufacturer

Diodes Incorporated

Introduction

High-performance N-channel MOSFET transistor

Product Features and Performance

Very low on-resistance for efficient power switching

Fast switching speed and low gate charge for improved efficiency

Suitable for a wide range of power management and control applications

Product Advantages

Compact surface-mount packaging

Wide operating temperature range of -55°C to 150°C

Low input capacitance for fast switching

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 30V

Maximum Gate-to-Source Voltage (Vgs): ±20V

On-Resistance (Rds(on)): 2.8Ω @ 250mA, 10V

Continuous Drain Current (Id): 380mA @ 25°C

Input Capacitance (Ciss): 23.2pF @ 25V

Power Dissipation: 300mW @ 25°C

Quality and Safety Features

RoHS3 compliant

Reliable and durable construction

Compatibility

Suitable for a wide range of power management and control applications

Application Areas

Power management circuits

Motor control

Battery-powered devices

Switching regulators

General-purpose switching

Product Lifecycle

Currently in production

Replacements and upgrades may be available in the future

Key Reasons to Choose This Product

Very low on-resistance for efficient power switching

Fast switching speed and low gate charge for improved efficiency

Compact surface-mount packaging for space-constrained designs

Wide operating temperature range for use in diverse environments

RoHS3 compliance for environmental safety