DMN65D8L-7 - Diodes Incorporated

Manufacturer Part Number

DMN65D8L-7

Manufacturer

Diodes Incorporated

Introduction

N-Channel Enhancement Mode MOSFET Transistor

Product Features and Performance

Drain-to-Source Voltage (Vdss) up to 60V

Continuous Drain Current (Id) up to 310mA at 25°C

On-Resistance (Rds(on)) as low as 3 ohms at 10V gate drive

Input Capacitance (Ciss) of 22pF at 25V

Fast Switching Speed

Low Gate Charge (Qg) of 0.87nC at 10V

Product Advantages

Suitable for low power, high efficiency switching applications

Robust design for reliable performance

Compact SOT-23-3 package for space-constrained designs

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 60V

Gate-to-Source Voltage (Vgs): ±20V

On-Resistance (Rds(on)): 3 ohms

Continuous Drain Current (Id): 310mA

Input Capacitance (Ciss): 22pF

Power Dissipation: 370mW

Quality and Safety Features

RoHS3 Compliant

ESD Protection

Overvoltage and Overcurrent Protection

Compatibility

Compatible with standard MOSFET drivers and control circuits

Application Areas

Switch-mode power supplies

DC-DC converters

Motor drivers

General purpose switching

Product Lifecycle

This product is currently in production and widely available

Replacement or upgrade options may be available in the future

Key Reasons to Choose This Product

Excellent performance-to-cost ratio

Compact and space-efficient package

Reliable and robust design for long-term use

Suitable for a wide range of low-power switching applications