DMN65D8LFB-7B - Diodes Incorporated

Manufacturer Part Number

DMN65D8LFB-7B

Manufacturer

Diodes Incorporated

Introduction

N-Channel MOSFET Transistor

Product Features and Performance

60V Drain-to-Source Voltage

2V Gate Threshold Voltage at 250μA

3Ω On-Resistance at 115mA, 10V

260mA Continuous Drain Current at 25°C

25pF Input Capacitance at 25V

430mW Power Dissipation at 25°C

Product Advantages

Compact 3-UFDFN package

Suitable for high-density PCB designs

Low on-resistance for improved efficiency

Wide operating temperature range of -55°C to 150°C

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 60V

Gate-to-Source Voltage (Vgs): ±20V

On-Resistance (Rds(on)): 3Ω @ 115mA, 10V

Drain Current (Id): 260mA at 25°C

Input Capacitance (Ciss): 25pF at 25V

Power Dissipation (Pd): 430mW at 25°C

Quality and Safety Features

RoHS3 compliant

Suitable for reflow soldering

Compatibility

Suitable for high-density surface mount applications

Application Areas

Power management circuits

Switching circuits

LED drivers

Motor control

Product Lifecycle

Currently in production

No announced discontinuation or replacement

Key Reasons to Choose This Product

Compact 3-UFDFN package for high-density designs

Low on-resistance for improved efficiency

Wide operating temperature range

RoHS3 compliance for environmental safety

Suitable for high-volume, automated manufacturing