Manufacturer Part Number
DMN65D8LW-7
Manufacturer
Diodes Incorporated
Introduction
N-channel MOSFET transistor for power switching and amplifier applications
Product Features and Performance
60V Drain-to-Source Voltage
300mA Continuous Drain Current
3Ω Maximum On-State Resistance
22pF Input Capacitance
300mW Maximum Power Dissipation
-55°C to 150°C Operating Temperature Range
Product Advantages
Efficient power switching and amplification
Compact SOT-323 surface mount package
Wide operating temperature range
Key Technical Parameters
MOSFET Technology
N-Channel FET Type
60V Drain-to-Source Voltage
2V Maximum Gate Threshold Voltage
5V/10V Drive Voltage Range
87nC Maximum Gate Charge
Quality and Safety Features
RoHS3 Compliant
Tape and Reel Packaging
Compatibility
Can be used in a variety of power switching and amplifier applications
Application Areas
Power supplies
Motor drives
Amplifiers
Switch-mode power supplies
Product Lifecycle
Currently in production, no known discontinuation plans
Key Reasons to Choose
Efficient power handling and switching performance
Compact surface mount package
Wide operating temperature range
RoHS3 compliance for environmental safety
Proven reliability from Diodes Incorporated