Manufacturer Part Number
DMN66D0LDW-7
Manufacturer
Diodes Incorporated
Introduction
Dual N-Channel MOSFET Array
Product Features and Performance
Automotive-grade MOSFET array
60V drain-to-source voltage
6Ω maximum on-resistance
115mA continuous drain current
23pF maximum input capacitance
2V maximum gate-to-source threshold voltage
Wide -55°C to 150°C operating temperature range
250mW maximum power dissipation
Product Advantages
Suitable for automotive and industrial applications
Compact 6-pin TSSOP package
Excellent thermal performance
Reliable and robust design
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 60V
On-Resistance (Rds(on)): 6Ω @ 115mA, 5V
Drain Current (Id): 115mA @ 25°C
Input Capacitance (Ciss): 23pF @ 25V
Gate-to-Source Threshold Voltage (Vgs(th)): 2V @ 250μA
Quality and Safety Features
RoHS3 compliant
AEC-Q101 qualified for automotive applications
Compatibility
Suitable for surface mount assembly
Available in tape and reel packaging
Application Areas
Automotive electronics
Industrial control systems
Power management circuits
General-purpose switching applications
Product Lifecycle
Current production part
Replacement or upgrade options available if needed
Key Reasons to Choose This Product
Reliable and robust automotive-grade performance
Compact and efficient package design
Wide operating temperature range
Excellent thermal management
Suitable for a variety of applications