DMN67D7L-7 - Diodes Incorporated

Manufacturer Part Number

DMN67D7L-7

Manufacturer

Diodes Incorporated

Introduction

This product is a single N-channel MOSFET transistor from Diodes Incorporated.

Product Features and Performance

60V Drain-to-Source Voltage (Vdss)

±40V Gate-to-Source Voltage (Vgs)

5Ω Maximum On-Resistance (Rds(on)) at 500mA, 10V

210mA Continuous Drain Current (Id) at 25°C

22pF Maximum Input Capacitance (Ciss) at 25V

570mW Maximum Power Dissipation at 25°C

Operating Temperature Range: -55°C to 150°C

Product Advantages

Low on-resistance for efficient power switching

High voltage handling capability

Small surface mount package

Key Technical Parameters

MOSFET Technology

N-Channel FET Type

5V Maximum Gate Threshold Voltage (Vgs(th)) at 250μA

5V/10V Drive Voltage for Minimum/Maximum Rds(on)

821nC Maximum Gate Charge (Qg) at 10V

Quality and Safety Features

RoHS3 Compliant

Compatibility

Surface mount package (SOT-23-3)

Application Areas

Power management

Switching circuits

General-purpose amplification and switching

Product Lifecycle

This product is an active and readily available component from Diodes Incorporated. Replacement or upgrade options may be available, but specific information is not provided.

Several Key Reasons to Choose This Product

Low on-resistance for efficient power switching

High voltage handling capability

Small surface mount package suitable for compact designs

RoHS3 compliance for environmentally-friendly applications