DMN67D8L-7 - Diodes Incorporated

Manufacturer Part Number

DMN67D8L-7

Manufacturer

Diodes Incorporated

Introduction

N-Channel MOSFET Transistor

Designed for general-purpose switching and amplification applications

Product Features and Performance

Drain to Source Voltage (Vdss): 60 V

Vgs (Max): ±30 V

Rds On (Max) @ Id, Vgs: 5 Ohm @ 500 mA, 10 V

Continuous Drain Current (Id) @ 25°C: 210 mA

Input Capacitance (Ciss) (Max) @ Vds: 22 pF @ 25 V

Power Dissipation (Max): 340 mW

Product Advantages

Low on-state resistance for improved efficiency

Fast switching speed for high-frequency applications

Stable performance over wide temperature range

Key Technical Parameters

Technology: MOSFET (Metal Oxide)

FET Type: N-Channel

Vgs(th) (Max) @ Id: 2.5 V @ 250 A

Drive Voltage (Max Rds On, Min Rds On): 5 V, 10 V

Gate Charge (Qg) (Max) @ Vgs: 0.82 nC @ 10 V

Quality and Safety Features

RoHS3 Compliant

Operates in -55°C to 150°C temperature range

Compatibility

Mounting Type: Surface Mount

Package: SOT-23-3

Application Areas

General-purpose switching and amplification

Power management circuitry

Motor control

Lighting control

Product Lifecycle

Currently in active production

Replacements and upgrades may be available in the future

Key Reasons to Choose This Product

Excellent performance-to-cost ratio

Reliable and stable operation over wide temperature range

Compact surface mount package for space-constrained designs

Compliance with RoHS regulations for environmentally-friendly use