DMN63D8LW-7 - Diodes Incorporated

Manufacturer Part Number

DMN63D8LW-7

Manufacturer

Diodes Incorporated

Introduction

N-Channel MOSFET transistor with low on-resistance and high power handling capability

Product Features and Performance

Very low on-resistance of 2.8 Ohm @ 250 mA, 10 V

High drain current capacity of 380 mA at 25°C

Wide operating temperature range of -55°C to 150°C

Low input capacitance of 23.2 pF at 25 V

Maximum power dissipation of 300 mW at 25°C

Product Advantages

Efficient power conversion and low heat generation

Suitable for a variety of power management and control applications

Robust design for reliable operation in harsh environments

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 30 V

Gate-to-Source Voltage (Vgs): ±20 V

Threshold Voltage (Vgs(th)): 1.5 V @ 250 μA

Gate Charge (Qg): 0.9 nC @ 10 V

Quality and Safety Features

RoHS3 compliant

Housed in a compact SOT-323 surface mount package

Compatibility

Compatible with a wide range of electronic circuits and power management systems

Application Areas

Power supplies

Motor control

LED drivers

Battery charging circuits

General power management and control applications

Product Lifecycle

This product is currently in production and actively supported by the manufacturer. Replacement or upgraded models may be available in the future as technology evolves.

Key Reasons to Choose This Product

Excellent power efficiency and low heat generation

Robust design for reliable operation in challenging environments

Compact and easy-to-integrate surface mount package

Suitable for a wide range of power management and control applications