IPN80R2K0P7ATMA1 - Infineon Technologies

Manufacturer Part Number

IPN80R2K0P7ATMA1

Manufacturer

Infineon Technologies

Introduction

This product is a high-voltage N-channel MOSFET from Infineon's CoolMOS P7 series, designed for a wide range of power conversion applications.

Product Features and Performance

800V drain-to-source voltage (Vdss)

Low on-state resistance (RDS(on)) of 2Ω at 940mA, 10V

Wide operating temperature range of -55°C to 150°C

Low input capacitance (Ciss) of 175pF at 500V

Maximum power dissipation of 6.4W at Tc

Product Advantages

Excellent energy efficiency due to low conduction losses

High reliability and robustness for harsh environments

Simplified system design and reduced bill of materials

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 800V

Gate-to-Source Voltage (Vgs): ±20V

Continuous Drain Current (Id): 3A at 25°C

Gate Threshold Voltage (Vgs(th)): 3.5V at 50A

ON-State Resistance (RDS(on)): 2Ω at 940mA, 10V

Input Capacitance (Ciss): 175pF at 500V

Gate Charge (Qg): 9nC at 10V

Quality and Safety Features

RoHS3 compliant

Suitable for safety-critical applications

Compatibility

This MOSFET is compatible with a wide range of power conversion and control systems.

Application Areas

Switched-mode power supplies (SMPS)

Motor drives

Induction heating

Uninterruptible power supplies (UPS)

Industrial automation and control

Product Lifecycle

The IPN80R2K0P7ATMA1 is an actively supported product in Infineon's CoolMOS P7 series. Replacement or upgrade options may be available as technology evolves.

Key Reasons to Choose This Product

Excellent energy efficiency and low conduction losses

Robust design for harsh environments

Simplified system design and reduced bill of materials

Compatibility with a wide range of power conversion applications

Actively supported product with potential replacement options