IPN95R3K7P7ATMA1 - Infineon Technologies

Manufacturer Part Number

IPN95R3K7P7ATMA1

Manufacturer

Infineon Technologies

Introduction

This product is a high-performance N-Channel MOSFET from Infineon's CoolMOS P7 series, designed for a wide range of power electronic applications.

Product Features and Performance

950V drain-to-source voltage (Vdss)

7Ω maximum on-state resistance (Rds(on)) at 800mA, 10V

196pF maximum input capacitance (Ciss) at 400V

6W maximum power dissipation (Tc)

Wide operating temperature range of -55°C to 150°C (Tj)

Product Advantages

Improved efficiency and reduced energy consumption

Increased power density and reduced system size

Enhanced thermal performance and reliability

Key Technical Parameters

N-Channel MOSFET topology

950V drain-to-source voltage (Vdss)

±20V maximum gate-to-source voltage (Vgs)

5V maximum gate threshold voltage (Vgs(th)) at 40A

10V maximum drive voltage for Rds(on) (min/max)

Quality and Safety Features

RoHS3 compliant

PG-SOT223 package for surface mount applications

Compatibility

This MOSFET is compatible with a wide range of power electronic systems and can be used in various applications.

Application Areas

Switching power supplies

Motor drives

Inverters

Industrial and consumer electronics

Product Lifecycle

This product is currently available and actively supported by Infineon. There are no immediate plans for discontinuation, and replacement or upgrade options may be available.

Key Reasons to Choose This Product

Excellent power efficiency and thermal performance

High voltage capability for demanding applications

Compact surface mount package for space-constrained designs

Robust and reliable operation across a wide temperature range

Compatibility with a broad range of power electronic systems