IPN80R1K4P7 - Infineon Technologies

Manufacturer Part Number

IPN80R1K4P7

Manufacturer

Infineon Technologies

Introduction

The IPN80R1K4P7 is a high-voltage N-channel MOSFET from Infineon Technologies' CoolMOS series, designed for a variety of power conversion applications.

Product Features and Performance

800V drain-to-source voltage rating

4Ω maximum on-state resistance

4A continuous drain current at 25°C

Fast switching speed and low gate charge

Wide operating temperature range of -55°C to 150°C

Product Advantages

Excellent efficiency and thermal performance

Reliable and robust design

Optimized for high-frequency switching applications

Key Technical Parameters

Drain-to-source voltage (Vdss): 800V

Maximum gate-to-source voltage (Vgs): ±20V

On-state resistance (Rds(on)): 1.4Ω

Drain current (Id): 4A

Input capacitance (Ciss): 250pF

Power dissipation (Ptot): 7W

Quality and Safety Features

Manufactured in compliance with industry standards

Robust design for reliable operation

Compatibility

Suitable for a wide range of power conversion applications, including switch-mode power supplies, motor drives, and lighting ballasts.

Application Areas

Industrial and commercial power conversion systems

Renewable energy systems

Lighting and consumer electronics

Product Lifecycle

The IPN80R1K4P7 is an active product, with no known plans for discontinuation.

Replacement or upgrade options may be available from Infineon Technologies.

Key Reasons to Choose This Product

High voltage and current handling capabilities

Low on-state resistance for efficient power conversion

Fast switching speed for high-frequency applications

Robust and reliable design for long-term operation

Wide operating temperature range for versatile applications