Manufacturer Part Number
IPN80R1K4P7
Manufacturer
Infineon Technologies
Introduction
The IPN80R1K4P7 is a high-voltage N-channel MOSFET from Infineon Technologies' CoolMOS series, designed for a variety of power conversion applications.
Product Features and Performance
800V drain-to-source voltage rating
4Ω maximum on-state resistance
4A continuous drain current at 25°C
Fast switching speed and low gate charge
Wide operating temperature range of -55°C to 150°C
Product Advantages
Excellent efficiency and thermal performance
Reliable and robust design
Optimized for high-frequency switching applications
Key Technical Parameters
Drain-to-source voltage (Vdss): 800V
Maximum gate-to-source voltage (Vgs): ±20V
On-state resistance (Rds(on)): 1.4Ω
Drain current (Id): 4A
Input capacitance (Ciss): 250pF
Power dissipation (Ptot): 7W
Quality and Safety Features
Manufactured in compliance with industry standards
Robust design for reliable operation
Compatibility
Suitable for a wide range of power conversion applications, including switch-mode power supplies, motor drives, and lighting ballasts.
Application Areas
Industrial and commercial power conversion systems
Renewable energy systems
Lighting and consumer electronics
Product Lifecycle
The IPN80R1K4P7 is an active product, with no known plans for discontinuation.
Replacement or upgrade options may be available from Infineon Technologies.
Key Reasons to Choose This Product
High voltage and current handling capabilities
Low on-state resistance for efficient power conversion
Fast switching speed for high-frequency applications
Robust and reliable design for long-term operation
Wide operating temperature range for versatile applications
