Manufacturer Part Number
IPN70R600P7SATMA1
Manufacturer
Infineon Technologies
Introduction
High-voltage, high-efficiency CoolMOS P7 MOSFET
Product Features and Performance
Drain-to-Source Voltage (Vdss) of 700V
On-State Resistance (RDS(on)) of 600mΩ @ 1.8A, 10V
Continuous Drain Current (ID) of 8.5A @ 25°C (Tc)
Input Capacitance (Ciss) of 364pF @ 400V
Power Dissipation (Ptot) of 6.9W @ 25°C (Tc)
Operating Temperature Range of -40°C to 150°C (TJ)
Product Advantages
Excellent efficiency and power density
Low switching and conduction losses
Robust and reliable design
Suitable for high-voltage, high-power applications
Key Technical Parameters
N-Channel MOSFET
Gate-to-Source Voltage (Vgs) of ±16V
Gate Threshold Voltage (Vgs(th)) of 3.5V @ 90A
Gate Charge (Qg) of 10.5nC @ 10V
Quality and Safety Features
RoHS3 compliant
Suitable for reflow soldering
Compatibility
Surface mount package (PG-SOT223)
Tape & Reel packaging
Application Areas
Switched-mode power supplies
Power factor correction circuits
Motor drives
Electric vehicle chargers
Product Lifecycle
Currently available
No information on discontinuation or replacement
Several Key Reasons to Choose This Product
High voltage and current handling capabilities
Excellent efficiency and low power losses
Robust and reliable design for demanding applications
Compact surface mount packaging for high-density designs
Wide operating temperature range
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