IPN50R2K0CEATMA1 - Infineon Technologies

Manufacturer Part Number

IPN50R2K0CEATMA1

Manufacturer

Infineon Technologies

Introduction

High-performance N-Channel MOSFET with CoolMOS CE technology

Product Features and Performance

500V Drain-to-Source Voltage (Vdss)

2Ω Max On-State Resistance (Rds(on)) at 600mA, 13V

6A Continuous Drain Current (Id) at 25°C case temperature

124pF Max Input Capacitance (Ciss) at 100V

5W Max Power Dissipation at 25°C case temperature

-40°C to 150°C Operating Temperature Range

Product Advantages

Low conduction losses

Excellent switching performance

High reliability and robustness

Compact TO-261-4 package

Key Technical Parameters

Vdss: 500V

Vgs (Max): ±20V

Rds On (Max) @ Id, Vgs: 2Ω @ 600mA, 13V

Id (Continuous) @ 25°C: 3.6A

Ciss (Max) @ Vds: 124pF @ 100V

Power Dissipation (Max): 5W

Quality and Safety Features

ROHS3 Compliant

AEC-Q101 qualified

Compatibility

Surface mount package, compatible with standard SMT assembly processes

Application Areas

Switched-mode power supplies

Motor drives

Inverters

Industrial and home appliances

Product Lifecycle

This product is currently in production and available

No plans for discontinuation or replacement at this time

Key Reasons to Choose This Product

Excellent performance and efficiency with CoolMOS CE technology

Robust and reliable design for industrial and consumer applications

Compact TO-261-4 surface mount package for easy integration

Wide operating temperature range of -40°C to 150°C