Manufacturer Part Number
IPN70R1K2P7SATMA1
Manufacturer
Infineon Technologies
Introduction
High-voltage, high-efficiency CoolMOS P7 MOSFET
Product Features and Performance
700V drain-source voltage
Very low on-resistance (1.2Ω @ 900mA, 10V)
Low input capacitance (174pF @ 400V)
Low gate charge (4.8nC @ 10V)
High current capability (4.5A continuous @ 25°C)
Wide operating temperature range (-40°C to 150°C)
Surface mount packaging (TO-261-4, TO-261AA)
Product Advantages
Improved efficiency in high-voltage applications
Reduced switching losses
Compact design
Key Technical Parameters
Drain-Source Voltage (Vdss): 700V
Gate-Source Voltage (Vgs): ±16V
On-Resistance (Rds(on)): 1.2Ω @ 900mA, 10V
Continuous Drain Current (Id): 4.5A @ 25°C
Input Capacitance (Ciss): 174pF @ 400V
Gate Charge (Qg): 4.8nC @ 10V
Quality and Safety Features
RoHS3 compliant
Reliable and durable performance
Compatibility
Suitable for high-voltage, high-efficiency applications
Application Areas
Switching power supplies
Motor drives
Induction heating
Industrial electronics
Product Lifecycle
Current model, no plans for discontinuation
Replacement or upgrade options available
Key Reasons to Choose This Product
Excellent efficiency and low losses
High power density and compact design
Reliable and robust performance
Wide temperature range and RoHS compliance
Suitable for a variety of high-voltage applications
