Manufacturer Part Number
IPN70R1K5CE
Manufacturer
Infineon Technologies
Introduction
High-voltage N-channel power MOSFET
Part of the CoolMOS series
Product Features and Performance
High blocking voltage of 700V
Low on-resistance of 1.5Ω
Continuous drain current of 5.4A at 25°C
Product Advantages
Excellent efficiency due to low conduction and switching losses
High reliability and ruggedness
Suitable for high-voltage, high-power applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 700V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 1.5Ω @ 1A, 10V
Input Capacitance (Ciss): 225pF @ 100V
Power Dissipation: 5W
Quality and Safety Features
Robust and reliable MOSFET design
Suitable for high-temperature operation (-40°C to 150°C)
Complies with relevant safety and environmental standards
Compatibility
Surface mount package (PG-SOT223)
Suitable for a wide range of high-voltage, high-power applications
Application Areas
Switch-mode power supplies
Motor drives
Lighting ballasts
Uninterruptible power supplies (UPS)
Industrial and consumer electronics
Product Lifecycle
Currently in active production
Replacement and upgrade options available from Infineon
Key Reasons to Choose This Product
High voltage and current handling capabilities
Excellent efficiency and low losses
Robust and reliable design for demanding applications
Compatibility with a wide range of high-power circuits
Supported by Infineon's extensive technical resources and customer service
