Manufacturer Part Number
IRLM220ATF
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Single Transistor MOSFET
Product Features and Performance
N-Channel MOSFET
Drain to Source Voltage (Vdss): 200V
Gate-Source Voltage (Vgs Max): ±20V
Drain Current (Id): 1.13A at 25°C
On-Resistance (Rds(on)): 800mΩ at 570mA, 5V
Input Capacitance (Ciss): 430pF at 25V
Power Dissipation: 2W at Tc
Fast switching speed
Low on-resistance
High voltage capability
Product Advantages
Suitable for high voltage, high current switching applications
Efficient power conversion and control
Compact surface mount package
Key Technical Parameters
MOSFET Technology
Drain-Source Voltage (Vdss): 200V
Gate-Source Voltage (Vgs Max): ±20V
Drain Current (Id): 1.13A at 25°C
On-Resistance (Rds(on)): 800mΩ at 570mA, 5V
Input Capacitance (Ciss): 430pF at 25V
Power Dissipation: 2W at Tc
Quality and Safety Features
RoHS3 Compliant
Operating Temperature: -55°C to 150°C
Compatibility
TO-261-4, TO-261AA package
Surface mount
Application Areas
High voltage, high current switching applications
Power conversion and control circuits
Industrial, automotive, and consumer electronics
Product Lifecycle
Current product
Replacements and upgrades available
Key Reasons to Choose This Product
High voltage and current capability
Low on-resistance for efficient power handling
Fast switching speed
Compact surface mount package
Wide operating temperature range
RoHS3 compliant for environmental regulations
