Manufacturer Part Number
CY7C1041G30-10BVJXI
Manufacturer
Infineon Technologies
Introduction
High-speed 4Mbit SRAM with parallel interface for embedded applications
Product Features and Performance
Volatile SRAM memory
Asynchronous SRAM technology
4Mbit storage capacity
256K x 16 organization
Parallel memory interface
10ns write cycle time
10ns access time
Product Advantages
Optimized for high-speed operations
Large density for extensive data storage
Reliable data retention
Low power consumption
Key Technical Parameters
Memory Size: 4Mbit
Memory Organization: 256K x 16
Write Cycle Time - Word, Page: 10ns
Access Time: 10 ns
Voltage - Supply: 2.2V to 3.6V
Operating Temperature: -40°C to 85°C
Quality and Safety Features
Operates across industrial temperature ranges
Sturdy surface mount 48-VFBGA package
Compatibility
Wide voltage range for compatibility with various logic levels
Standard surface mount package for straightforward PCB design
Application Areas
Embedded systems
Industrial controls
Automotive electronics
Networking hardware
Gaming systems
Product Lifecycle
Active product with ongoing manufacturer support
Alternatives available for future upgrades
Several Key Reasons to Choose This Product
High-speed operation enhances system performance
Robust temperature range for industrial applications
Large 4Mbit capacity within a small form factor
Infineon's reputation for quality and reliability
Compatibility with a wide range of supply voltages for greater design flexibility
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