Manufacturer Part Number
CY7C1041GN30-10ZSXI
Manufacturer
Infineon Technologies
Introduction
High-Speed Asynchronous SRAM Memory
Product Features and Performance
Volatile Memory Type
Asynchronous SRAM Technology
4Mbit Memory Size
256K x 16 Memory Organization
Parallel Memory Interface
10ns Write Cycle Time
10ns Access Time
Product Advantages
Optimized for High-Speed Operation
Low Power Consumption
Wide Voltage Range Support
Key Technical Parameters
Memory Size: 4Mbit
Memory Format: SRAM
Access Time: 10 ns
Supply Voltage: 2.2V to 3.6V
Operating Temperature Range: -40°C to 85°C
Quality and Safety Features
Extended Temperature Range Support
Robust Surface Mount Package
Compatibility
Industry-Standard 44-TSOP II Package
Compatible with Various Microcontrollers and Processors
Application Areas
High-Performance Computing
Networking
Telecommunications
Industrial Control Systems
Product Lifecycle
Active Product Status
Reliable Long-Term Availability
Several Key Reasons to Choose This Product
High-Speed Operation Suitable for Critical Applications
Large Storage Capacity with Fast Access Time
Compatible with a Wide Voltage Range for Flexible Design
Proven Reliability in Extreme Temperature Conditions
Industry Standard Package for Easy Integration in Various Designs
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