Manufacturer Part Number
CY7C1041GN-10ZSXIT
Manufacturer
Infineon Technologies
Introduction
High-speed Asynchronous 4Mbit SRAM
Product Features and Performance
Volatile Memory Type
Asynchronous SRAM Technology
Memory Size of 4Mbit
256K x 16 Memory Organization
Parallel Memory Interface
10ns Write Cycle Time
10ns Access Time
Surface Mount Mounting Type
44-TSOP II Package
Product Advantages
Rapid Access and Write Speeds
High Density for Memory-Intensive Applications
Wide Operating Temperature Range
Reliability in Harsh Environments
Suitable for High-Performance Computing
Key Technical Parameters
Memory Type: Volatile SRAM
Memory Format: 256K x 16
Voltage Supply Range: 4.5V to 5.5V
Operating Temperature Range: -40°C to 85°C
Quality and Safety Features
Robust TSOP Packaging
Designed for Harsh Temperature Environments
Compatibility
Compatible with Various Microcontrollers and Processors Supporting Parallel Interface
Application Areas
High-Speed Microprocessor Systems
Networking Hardware
Telecommunications Equipment
Industrial Control Systems
Product Lifecycle
Active Product Status
Standard Lifecycle
Potential for Future Upgrades Based on Base Product Number CY7C1041
Several Key Reasons to Choose This Product
Exceptional Speed with 10ns Access and Write Cycles
Stable Performance in Extreme Temperatures
High-level Compatibility with Parallel Interface Devices
Large Memory Capacity for Data-Intensive Tasks
Robustness for Industrial and Commercial Applications
Backed by Infineon Technologies' Reputation for Quality
CY7C1041LV33-10ZSXITCypress Semiconductor
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