Manufacturer Part Number
CY7C1041GN30-10ZSXIT
Manufacturer
Infineon Technologies
Introduction
The CY7C1041GN30-10ZSXIT is a high-speed CMOS SRAM memory product from Infineon Technologies, offering a volatile 4Mbit memory in a 44-TSOP II package.
Product Features and Performance
4Mbit memory capacity
Asynchronous SRAM technology
Access time of 10 ns
Write cycle time of 10 ns
Operating temperature range from -40°C to 85°C
Voltage supply range from 2.2V to 3.6V
Product Advantages
Fast access and write speeds enhance system performance
Wide operating temperature suitable for various environments
Supports low to moderate voltage levels, ensuring flexibility in power design
Key Technical Parameters
Memory Type: Volatile
Memory Format: SRAM
Memory Size: 4Mbit
Memory Organization: 256K x 16
Memory Interface: Parallel
Voltage - Supply: 2.2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Quality and Safety Features
Compliant with industry standard safety and quality norms
Encapsulated in a robust 44-TSOP II package
Compatibility
Compatible with systems requiring high-speed, volatile memory with a parallel interface
Application Areas
Computing systems
Consumer electronics
Embedded systems
Communications equipment
Product Lifecycle
Status: Active
The product is currently active with no announced discontinuation, and replacements or upgrades are available as required.
Several Key Reasons to Choose This Product
High-speed operation with 10 ns access and write speeds
Robust temperature range making it suitable for diverse operating conditions
Flexible voltage requirements accommodating a range of power supplies
Large memory capacity beneficial for data-intensive applications
Reliable packaging and quality standards ensure long product lifespan
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