Manufacturer Part Number
CY7C1041G30-10ZSXE
Manufacturer
Infineon Technologies
Introduction
A high-performance, 4Mbit SRAM memory chip designed for fast and reliable data storage and retrieval in a wide range of electronic applications.
Product Features and Performance
4Mbit memory size
Asynchronous SRAM technology
Parallel memory interface
256K x 16 memory organization
Fast access time of 10 ns
Write cycle time Word, Page: 10ns
Operating temperature range from -40°C to 125°C
Product Advantages
High-speed operation
Wide voltage supply range from 2.2V to 3.6V
Suitable for high-temperature environments
Easy integration into various systems due to its parallel interface
Key Technical Parameters
Memory Type: Volatile
Memory Format: SRAM Asynchronous
Voltage Supply: 2.2V ~ 3.6V
Access Time: 10 ns
Operating Temperature: -40°C ~ 125°C
Quality and Safety Features
Manufactured by Infineon Technologies, known for high-quality and reliable semiconductor products
Designed to meet rigorous electronic standards and certifications
Compatibility
Compatible with a wide range of electronic devices that require fast and reliable memory solutions
Suitable for use in industrial, automotive, and consumer electronics applications
Application Areas
Embedded systems
High-performance computing
Automotive electronics
Industrial control systems
Consumer electronics
Product Lifecycle
Active product status, indicating ongoing manufacture and support
No indication of nearing discontinuation, ensuring long-term availability for new designs and existing applications
Several Key Reasons to Choose This Product
Exceptional speed and reliability for critical data storage and retrieval needs
Broad operating temperature range catering to demanding environments
Flexible voltage supply options enabling integration into various electronic systems
Backed by Infineon Technologies, a leader in semiconductor solutions
Active product lifecycle status ensures long-term support and availability
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