Manufacturer Part Number
CY7C1041DV33-10ZSXIT
Manufacturer
Infineon Technologies
Introduction
High-speed 4Mbit SRAM Memory
Product Features and Performance
Volatile Memory
SRAM - Asynchronous Technology
4Mbit Memory Size
Parallel Memory Interface
10 ns Write Cycle Time
10 ns Access Time
Surface Mount Mounting Type
Product Advantages
Fast Access and Write Times
High-density 4Mbit Storage
Stable and Reliable SRAM Technology
Key Technical Parameters
Memory Organization: 256K x 16
Voltage Supply: 3V to 3.6V
Operating Temperature: -40°C to 85°C
Package / Case: 44-TSOP
Quality and Safety Features
Wide Operating Temperature Range
Durable 44-TSOP II Package
Compatibility
Compatible with Parallel Memory Interface Systems
Application Areas
High-speed Computing
Networking
Telecommunications
Product Lifecycle
Obsolete Status
Potential Replacement or Upgrade Required
Key Reasons to Choose This Product
Infineon Technologies' Engineering Expertise
High-speed Data Access
Suitable for High-performance Applications
Large Memory Capacity in SRAM Category
Compatibility with a Range of Voltage Supplies
Industrial Operating Temperature Range Support
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