Manufacturer Part Number
CY7C1041DV33-10BVJXI
Manufacturer
Cypress Semiconductor
Introduction
High-performance, low-power SRAM (Asynchronous) Memory IC
Product Features and Performance
4Mb (256K x 16) memory size
10ns access time
Parallel memory interface
10ns write cycle time (word, page)
Wide operating voltage range: 3V to 3.6V
Wide temperature range: -40°C to 85°C
Product Advantages
Fast access and write speeds
Low power consumption
Compact 48-VFBGA (6x8) package
Suitable for a wide range of applications
Key Technical Parameters
Memory Type: Volatile SRAM
Memory Size: 4Mb (256K x 16)
Memory Interface: Parallel
Access Time: 10ns
Write Cycle Time: 10ns (word, page)
Operating Voltage: 3V to 3.6V
Operating Temperature: -40°C to 85°C
Quality and Safety Features
Lead-free / RoHS compliant
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Compatibility
Surface mount (SMD) package
Compatible with a wide range of electronic systems and devices
Application Areas
Embedded systems
Industrial automation
Telecommunications equipment
Consumer electronics
Automotive electronics
Product Lifecycle
This product is currently in production and widely available
Replacement or upgrade options may be available from Cypress Semiconductor or authorized distributors
Key Reasons to Choose This Product
High-performance SRAM with fast access and write speeds
Low power consumption for energy-efficient operation
Compact package size and wide temperature range for versatile applications
Reliable and RoHS-compliant design for quality assurance
Broad compatibility with various electronic systems and devices
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