CY7C1041CV33-20ZSXE - Infineon Technologies

Manufacturer Part Number

CY7C1041CV33-20ZSXE

Manufacturer

Infineon Technologies

Introduction

High-speed CMOS SRAM, 4Mbit memory capacity

Product Features and Performance

Volatile memory type

Asynchronous SRAM technology

Access time of 20 nanoseconds

4Mbit memory size with 256K x 16 organization

Parallel memory interface

Product Advantages

Fast write cycle time of 20ns suitable for high-performance applications

Supports a wide voltage range (3V to 3.6V)

High operating temperature range from -40°C to 125°C

Key Technical Parameters

Memory Type: SRAM - Volatile

Memory Format: SRAM - Asynchronous

Memory Size: 4Mbit

Memory Organization: 256K x 16

Write Cycle Time: 20ns

Access Time: 20ns

Voltage Supply: 3V ~ 3.6V

Operating Temperature: -40°C ~ 125°C

Quality and Safety Features

Designed for high reliability and stability

Wide operating temperature suitable for harsh environments

Compatibility

Surface Mount, 44-TSOP II packaging compatible with standard PCB assemblies

Application Areas

Suitable for a wide range of electronics that require high-speed and reliable data storage

Product Lifecycle

Discontinued at Digi-Key

Consult Infineon Technologies for potential replacement or upgrade options

Several Key Reasons to Choose This Product

Ideal for applications demanding fast access and write times

Robust thermal performance for use in extreme temperatures

Supports legacy systems requiring parallel interface SRAM

Strong brand reputation of Infineon Technologies for quality and reliability