Manufacturer Part Number
CY7C1041CV33-20ZSXE
Manufacturer
Infineon Technologies
Introduction
High-speed CMOS SRAM, 4Mbit memory capacity
Product Features and Performance
Volatile memory type
Asynchronous SRAM technology
Access time of 20 nanoseconds
4Mbit memory size with 256K x 16 organization
Parallel memory interface
Product Advantages
Fast write cycle time of 20ns suitable for high-performance applications
Supports a wide voltage range (3V to 3.6V)
High operating temperature range from -40°C to 125°C
Key Technical Parameters
Memory Type: SRAM - Volatile
Memory Format: SRAM - Asynchronous
Memory Size: 4Mbit
Memory Organization: 256K x 16
Write Cycle Time: 20ns
Access Time: 20ns
Voltage Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 125°C
Quality and Safety Features
Designed for high reliability and stability
Wide operating temperature suitable for harsh environments
Compatibility
Surface Mount, 44-TSOP II packaging compatible with standard PCB assemblies
Application Areas
Suitable for a wide range of electronics that require high-speed and reliable data storage
Product Lifecycle
Discontinued at Digi-Key
Consult Infineon Technologies for potential replacement or upgrade options
Several Key Reasons to Choose This Product
Ideal for applications demanding fast access and write times
Robust thermal performance for use in extreme temperatures
Supports legacy systems requiring parallel interface SRAM
Strong brand reputation of Infineon Technologies for quality and reliability
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