CY7C1041G30-10ZSXI - Infineon Technologies

Manufacturer Part Number

CY7C1041G30-10ZSXI

Manufacturer

Infineon Technologies

Introduction

Fast static random access memory component for high-speed data storage and retrieval

Product Features and Performance

Asynchronous SRAM technology

High-density 4Mbit memory capacity

Organized as 256K x 16 bits

Access times as fast as 10 ns

Parallel memory interface for easy integration

Write Cycle Time for word or page at 10 ns

Operating supply voltage range from 2.2V to 3.6V

Supports wide operating temperature range from -40°C to 85°C

Product Advantages

Quick data access significantly improves system performance

Flexible voltage range accommodates various system requirements

High temperature tolerance ensures reliability in harsh environments

Surface mount package eases PCB design and assembly processes

Key Technical Parameters

Memory Size: 4Mbit

Memory Organization: 256K x 16

Access Time: 10 ns

Voltage Supply: 2.2V ~ 3.6V

Operating Temperature: -40°C ~ 85°C

Quality and Safety Features

Robust operation within the specified temperature range

Compliant with industry standards for SRAM memory

Compatibility

Suitable for devices needing high-speed, volatile memory

Compatible with systems requiring a parallel memory interface

Can interface with a broad range of microcontrollers and processors

Application Areas

Embedded systems

Telecommunications

Automotive electronics

Industrial control systems

Consumer electronics

Product Lifecycle

Product Status: Active

Not nearing discontinuation

Replacement parts or upgrades available as technology advances

Several Key Reasons to Choose This Product

Rapid 10 ns access time enhances system response

Infineon Technologies' reputation for quality and reliability

Versatile utility across multiple applications and industries

High data storage capacity meeting modern electronic demands

Adaptable to various voltages for integration flexibility

Extended operational temperature range suits extreme conditions