Manufacturer Part Number
NSVBC846BM3T5G
Manufacturer
onsemi
Introduction
High-voltage, high-gain, high-speed NPN bipolar transistor
Product Features and Performance
Wide operating temperature range: -55°C to 150°C
Low collector-emitter saturation voltage: 600 mV @ 5 mA, 100 mA
High DC current gain: 200 min. @ 2 mA, 5 V
High transition frequency: 100 MHz
Low collector-base leakage current: 15 nA max.
Surface-mount package: SOT-723
Product Advantages
Suitable for high-speed switching and amplification applications
Robust design for reliable operation in harsh environments
Compact surface-mount package for efficient board layout
Key Technical Parameters
Collector-Emitter Breakdown Voltage (max): 65 V
Collector Current (max): 100 mA
Power Dissipation (max): 265 mW
Quality and Safety Features
RoHS3 compliant
Reliable performance in a wide temperature range
Compatibility
Suitable for surface-mount applications
Application Areas
High-speed switching
Amplification
Power management
Industrial control
Automotive electronics
Product Lifecycle
Current product, no information on discontinuation or replacements
Key Reasons to Choose This Product
High-performance bipolar transistor with excellent electrical characteristics
Compact surface-mount package for efficient board layout
Robust design for reliable operation in harsh environments
Suitable for a wide range of high-speed switching and amplification applications