NSVBCP53-16T3G - onsemi

Manufacturer Part Number

NSVBCP53-16T3G

Manufacturer

onsemi

Introduction

This is a PNP bipolar junction transistor (BJT) from onsemi, suitable for various electronic circuit applications.

Product Features and Performance

Designed for high-frequency and high-power applications

Capable of operating at temperatures up to 150°C

Supports a maximum collector current of 1.5A

Offers a high DC current gain of at least 100 at 150mA and 2V

Exhibits a transition frequency of 50MHz

Housed in a compact, surface-mount SOT-223 (TO-261) package

Product Advantages

Robust thermal performance for high-temperature operation

High current-handling capability for power applications

Excellent current gain for efficient amplification and switching

High-frequency operation for high-speed circuits

Compact and space-saving surface-mount package

Key Technical Parameters

Collector-Emitter Breakdown Voltage (Max): 80V

Collector Cutoff Current (Max): 100nA

Collector-Emitter Saturation Voltage (Max): 500mV @ 50mA, 500mA

Power Dissipation (Max): 1.5W

Operating Temperature Range: -65°C to 150°C

Quality and Safety Features

RoHS3 compliant for environmental responsibility

Reliable and durable construction for long-term operation

Compatibility

Suitable for a wide range of electronic circuits and applications

Application Areas

Amplifiers

Switches

Power supplies

Motor controls

Audio equipment

Industrial electronics

Product Lifecycle

This product is currently in production and readily available.

Replacements or upgrades may be available in the future as technology advances.

Key Reasons to Choose This Product

Excellent thermal management for high-temperature applications

High current and power handling capabilities

Efficient amplification and switching performance

High-frequency operation for fast-paced circuits

Compact and space-saving surface-mount package

RoHS3 compliance for environmental sustainability