NSVBCP69T1G - onsemi

Manufacturer Part Number

NSVBCP69T1G

Manufacturer

onsemi

Introduction

High voltage, high current PNP bipolar junction transistor (BJT) in a small SOT-223 (TO-261) package.

Product Features and Performance

High voltage (20V) and high current (1A) capability

Transition frequency of 60MHz

Low collector-emitter saturation voltage of 500mV @ 100mA, 1A

Wide operating temperature range of -65°C to 150°C

Product Advantages

Compact SOT-223 (TO-261) package

High power handling capability

Suitable for high-speed switching and amplification applications

Key Technical Parameters

Collector-Emitter Breakdown Voltage (Max): 20V

Collector Current (Max): 1A

Collector Cutoff Current (Max): 10A

DC Current Gain (hFE) (Min): 85 @ 500mA, 1V

Transition Frequency: 60MHz

Power Dissipation (Max): 1.5W

Quality and Safety Features

RoHS3 compliant

Reliable performance in a wide temperature range

Compatibility

Suitable for surface mount applications

Application Areas

High-speed switching and amplification circuits

Power amplifiers

Inverters

Motor control

Industrial and consumer electronics

Product Lifecycle

This product is currently in production and available.

Replacements or upgrades may become available in the future as technology evolves.

Key Reasons to Choose This Product

High voltage and current handling capabilities

Compact SOT-223 (TO-261) package

Wide operating temperature range

Suitable for high-speed switching and amplification applications

Reliable performance with RoHS3 compliance