NSVBCW68GLT1G - onsemi

Manufacturer Part Number

NSVBCW68GLT1G

Manufacturer

onsemi

Introduction

Discrete Semiconductor Product

Bipolar Junction Transistor (BJT), PNP type

Product Features and Performance

High current handling capability up to 800 mA

Fast switching speed with transition frequency of 100 MHz

Low collector-emitter saturation voltage of 700 mV at 50 mA, 500 mA

Wide operating temperature range of -55°C to 150°C

Product Advantages

Reliable performance in high power applications

Efficient power conversion and control

Robust and stable operation across wide temperature range

Key Technical Parameters

Collector-Emitter Breakdown Voltage: 45 V

Collector Cutoff Current: 20 nA

DC Current Gain: 120 min. @ 10 mA, 1 V

Quality and Safety Features

RoHS3 compliant

Compact SOT-23-3 (TO-236) surface mount package

Compatibility

Suitable for various power electronics and control circuits

Application Areas

Power supplies

Motor controls

Amplifiers

Switches

Product Lifecycle

Currently available

No information on upcoming discontinuation or replacements

Key Reasons to Choose

High power and fast switching capabilities

Reliable performance in wide temperature range

Compact surface mount packaging

RoHS compliance for environmental safety