NSVDTA114EET1G - onsemi

Manufacturer Part Number

NSVDTA114EET1G

Manufacturer

onsemi

Introduction

Pre-biased PNP bipolar junction transistor (BJT) for general-purpose applications.

Product Features and Performance

Power rating of 200 mW

Collector-emitter breakdown voltage up to 50 V

Collector current up to 100 mA

Collector cutoff current of 500 nA maximum

Vce saturation voltage of 250 mV maximum at 10 mA collector current

DC current gain of 35 minimum at 5 mA collector current

Product Advantages

Pre-biased for simplified circuit design

Compact SC-75, SOT-416 surface-mount package

RoHS3 compliant

Key Technical Parameters

Transistor type: PNP, pre-biased

Collector-emitter breakdown voltage: 50 V

Collector current: 100 mA

Collector cutoff current: 500 nA

Vce saturation voltage: 250 mV

DC current gain: 35 minimum

Base resistors: 10 kΩ

Quality and Safety Features

RoHS3 compliant for environmental responsibility

Reliable surface-mount package for robust performance

Compatibility

Suitable for general-purpose amplifier, switch, and driver applications

Application Areas

Consumer electronics

Industrial controls

Telecommunications equipment

Product Lifecycle

Currently in active production

Replacements and upgrades available as needed

Several Key Reasons to Choose This Product

Simplified circuit design with pre-biased configuration

Compact surface-mount package for space-constrained applications

Reliable performance with RoHS3 compliance

Versatile for a wide range of general-purpose transistor applications