NSVDTA115EET1G - onsemi

Manufacturer Part Number

NSVDTA115EET1G

Manufacturer

onsemi

Introduction

The NSVDTA115EET1G is a single, pre-biased PNP bipolar junction transistor (BJT) from onsemi.

Product Features and Performance

Power rating of 200 mW

Collector-emitter breakdown voltage up to 50 V

Collector current up to 100 mA

Collector cutoff current of 500 nA

Vce saturation voltage of 250 mV at 10 mA collector current

DC current gain (hFE) of at least 80 at 5 mA collector current

100 kOhm base and emitter-base resistors

Product Advantages

Pre-biased design for simplified circuit design

High breakdown voltage for automotive and industrial applications

Low saturation voltage for efficient switching

Compact surface-mount package

Key Technical Parameters

Voltage Collector Emitter Breakdown (Max): 50 V

Current Collector (Ic) (Max): 100 mA

Current Collector Cutoff (Max): 500 nA

Vce Saturation (Max) @ Ib, Ic: 250 mV @ 300 μA, 10 mA

DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5 mA, 10 V

Resistor Base (R1): 100 kOhms

Resistor Emitter Base (R2): 100 kOhms

Quality and Safety Features

RoHS3 compliant

AEC-Q101 qualified for automotive applications

Compatibility

Surface-mount SC-75, SOT-416 package

Tape and reel packaging

Application Areas

Automotive electronics

Industrial control systems

Consumer electronics

General-purpose switching and amplification

Product Lifecycle

Current and actively supported product

No discontinuation or end-of-life announced

Key Reasons to Choose This Product

Robust design for automotive and industrial use

Simplified circuit design with pre-biased configuration

Compact surface-mount package

High voltage and current handling capabilities

Low saturation voltage for efficient switching

AEC-Q101 qualification for automotive reliability