NSVBC848CLT1G - onsemi

Manufacturer Part Number

NSVBC848CLT1G

Manufacturer

onsemi

Introduction

Discrete Semiconductor Product

Single Bipolar Junction Transistor (BJT)

Product Features and Performance

Wide operating temperature range (-55°C to 150°C)

Low power consumption (max 225mW)

High voltage capability (30V max collector-emitter breakdown voltage)

High current capability (max 100mA collector current)

High current gain (min 200 at 2mA, 5V)

High frequency capability (100MHz transition frequency)

Product Advantages

Robust and reliable performance

Compact surface mount package

Suitable for a variety of applications

Key Technical Parameters

Collector-Emitter Breakdown Voltage: 30V (max)

Collector Current: 100mA (max)

Collector Cutoff Current: 15nA (max)

Collector-Emitter Saturation Voltage: 600mV (max) @ 5mA, 100mA

DC Current Gain: 200 (min) @ 2mA, 5V

Transition Frequency: 100MHz

Quality and Safety Features

RoHS3 compliant

Suitable for reflow soldering

Reliable operation within specified temperature range

Compatibility

Surface mount SOT-23-3 (TO-236) package

Suitable for tape and reel packaging

Application Areas

Switching circuits

Amplifier circuits

General-purpose electronic applications

Product Lifecycle

Currently in production

No known plans for discontinuation

Replacement or upgrade options available if needed

Key Reasons to Choose This Product

Excellent performance-to-size ratio

Wide operating temperature range

High voltage and current capabilities

Robust and reliable design

RoHS3 compliance for environmental sustainability

Compatibility with standard surface mount packaging and assembly processes